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ncsu_180nm_process_info

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Design Rules and Process Information for the NCSU 180nm CMOS Technology used in the class

  • We will be using an 0.18 micron 6 Metal 1 Poly (1.8V/3.3V) CMOS technology lambda(λ) equal to 0.09 micro meters. We are using an open-source PDK from NCSU.
  • We will be using the Scalable Deep Submicron CMOS rules for layout.
  • Design information for the C5 0.5u process is available here.
  • Use the MOSIS Scalable CMOS (SCMOS) SUBM design rules for your CPEG 4/624 layouts. The design rules can be found in this document. Note that the design rules are given in terms of lambda (=0.09u) while Cadence Virtuoso uses absolute values without any scaling. Thus in your layouts, multiply all design rule numbers by 0.09u for final layout dimensions. Eg. the minimum N-well width of 12 translates into 12*0.09u=1.08u in Virtuoso layout.
  • Process information including sheet resistances and transistor parameters can be found here .
  • Corner models for the C5 process are already available on the AMS server. They are usually located on the MOSIS site here.
ncsu_180nm_process_info.1598157412.txt.gz · Last modified: 2020/08/23 04:36 by vsaxena